? semiconductor components industries, llc, 2013 june, 2013 ? rev. 10 1 publication order number: bas16ht1/d bas16h, sbas16h switching diode features ? s prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit continuous reverse voltage v r 100 vdc peak forward current i f 200 madc non ? repetitive peak forward surge current, 60 hz i fsm(surge) 500 madc non ? repetitive peak forward current (square wave, t j = 25 c prior to surge) t = 1 s t = 10 s t = 100 s t = 1 ms t = 1 s i fsm 36.0 18.0 6.0 3.0 0.7 a stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit total device dissipation fr-5 board (note 1) t a = 25 c derate above 25 c p d 200 1.57 mw mw/ c thermal resistance junction to ambient r ja 635 c/w junction and storage temperature t j , t stg ? 55 to 150 c 1. fr-4 minimum pad. http://onsemi.com sod ? 323 case 477 style 1 marking diagram 1 cathode 2 anode a6 = specific device code m = date code device package shipping ? ordering information bas16ht1g sod ? 323 (pb ? free) 3000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 1 2 a6 m SBAS16HT1G sod ? 323 (pb ? free) 3000 /t ape & reel sbas16ht3g sod ? 323 (pb ? free) 10000 / tape & reel
bas16h, sbas16h http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics reverse voltage leakage current (v r = 100 vdc) (v r = 75 vdc, t j = 150 c) (v r = 25 vdc, t j = 150 c) i r ? ? ? 1.0 50 30 adc reverse breakdown voltage (i br = 100 adc) v (br) 100 ? vdc forward voltage (i f = 1.0 madc) (i f = 10 madc) (i f = 50 madc) (i f = 150 madc) v f ? ? ? ? 715 855 1000 1250 mv diode capacitance (v r = 0, f = 1.0 mhz) c d ? 2.0 pf forward recovery voltage (i f = 10 madc, t r = 20 ns) v fr ? 1.75 vdc reverse recovery time (i f = i r = 10 madc, r l = 50 ) t rr ? 6.0 ns stored charge (i f = 10 madc to v r = 5.0 vdc, r l = 500 ) q s ? 45 pc
bas16h, sbas16h http://onsemi.com 3 notes: 1. a 2.0 k variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 0.1 f d.u.t. v r 100 h 0.1 f 50 output pulse generator 50 input sampling oscilloscope t r t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit 100 0.2 0.4 v f , forward voltage (v) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , reverse voltage (v) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , reverse voltage (v) 0.64 0.60 0.56 0.52 c d , diode capacitance (pf) 2468 i f , forward current (ma) figure 2. forward voltage figure 3. leakage current figure 4. capacitance t a = -40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , reverse current ( a) figure 5. maximum non ? repetitive peak forward current as a function of pulse duration, typical values t p (msec) 1 0.1 0.01 0.001 0 5 10 15 20 25 i fsm (a) 10 30 35 40 based on square wave currents t j = 25 c prior to surge 0.0001
bas16h, sbas16h http://onsemi.com 4 package dimensions h e sod ? 323 case 477 ? 02 issue h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters. 3. lead thickness specified per l/f drawing with solder plating. 4. dimensions a and b do not include mold flash, protrusions or gate burrs. 5. dimension l is measured from end of radius. note 3 d 1 2 b e a3 a1 a c note 5 l 1.60 0.063 0.63 0.025 0.83 0.033 2.85 0.112 h e dim min nom max millimeters a 0.80 0.90 1.00 a1 0.00 0.05 0.10 a3 0.15 ref b 0.25 0.32 0.4 c 0.089 0.12 0.177 d 1.60 1.70 1.80 e 1.15 1.25 1.35 0.08 2.30 2.50 2.70 l 0.031 0.035 0.040 0.000 0.002 0.004 0.006 ref 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 min nom max inches *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 1: pin 1. cathode (polarity band) 2. anode on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other inte llectual property. a listing of scillc?s pr oduct/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typical s? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 bas16ht1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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